Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

被引:30
|
作者
Ahmad, Waqas [1 ]
Wu, Jiang [1 ]
Zhuang, Qiandong [2 ]
Neogi, Arup [1 ]
Wang, Zhiming [1 ,3 ]
机构
[1] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China
[2] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England
[3] Chengdu Univ, Inst Adv Study, Chengdu 610106, Peoples R China
关键词
2D materials; broadband photodetectors; group-10 transition metal dichalcogenides; optoelectronic devices; BROAD-BAND PHOTORESPONSE; IN-SITU FABRICATION; HIGH-PERFORMANCE; 2-DIMENSIONAL MATERIALS; MOS2; PHOTODETECTOR; OPTICAL-PROPERTIES; SPECTRAL RESPONSE; 2D PTTE2; HETEROJUNCTION; WATER;
D O I
10.1002/smll.202207641
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
引用
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页数:32
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