Giant coercivity enhancement in a room-temperature van der Waals magnet through substitutional metal-doping

被引:8
|
作者
Ahn, Hyo-Bin [1 ]
Jung, Soon-Gil [2 ]
Lim, Hyungjong [3 ]
Kim, Kwangsu [4 ,5 ]
Kim, Sanghoon [4 ]
Park, Tae-Eon [5 ]
Park, Tuson [6 ,7 ]
Lee, Changgu [1 ,3 ]
机构
[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 16419, South Korea
[2] Sunchon Natl Univ, Dept Phys Educ, Sunchon 57922, South Korea
[3] Sungkyunkwan Univ, Sch Mech Engn, Suwon 16419, South Korea
[4] Univ Ulsan, Dept Phys, Ulsan 44619, South Korea
[5] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
[6] Sungkyunkwan Univ, Ctr Quantum Mat & Superconduct CQMS, Suwon 16419, South Korea
[7] Sungkyunkwan Univ, Dept Phys, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
Coercive force - Frequency modulation - Germanium compounds - Magnetic anisotropy - Nickel - Semiconductor doping - Spin glass;
D O I
10.1039/d3nr00681f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
FexGeTe2 (x = 3, 4, and 5) systems, two-dimensional (2D) van der Waals (vdW) ferromagnetic (FM) metals with high Curie temperatures (T-C), have been intensively studied to realize all-2D spintronic devices. Recently, an intrinsic FM material Fe3GaTe2 with high T-C (350-380 K) has been reported. As substitutional doping changes the magnetic properties of vdW magnets, it can be a powerful means for engineering the properties of magnetic materials. Here, the coercive field (H-c) is substantially enhanced by substituting Ni for Fe in (Fe1-xNix)(3)GaTe2 crystals. The introduction of a Ni dopant with x = 0.03 can enhance the value of H-c up to & SIM;200% while maintaining the FM state at room temperature. As the doping level increases, T-C decreases, whereas H-c increases up to 7 kOe at x = 0.12, which is the highest H-c reported so far. The FM characteristic is almost suppressed at x = 0.68 and a spin glass state appears. The enhancement of H-c resulting from Ni doping can be attributed to domain pinning induced by substitutional Ni atoms, as evidenced by the decrease in magnetic anisotropy energy in the crystals upon Ni doping. Our findings provide a highly effective way to control the H-c of the 2D vdW FM metal Fe3GaTe2 for the realization of Fe3GaTe2 based room-temperature operating spintronic devices.
引用
收藏
页码:11290 / 11298
页数:9
相关论文
共 50 条
  • [41] van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors
    Alhazmi, Abrar
    Alolaiyan, Olaiyan
    Alharbi, Majed
    Alghamdi, Saeed
    Alsulami, Awsaf
    Alamri, Faisal
    Albawardi, Shahad
    Aljalham, Ghadeer
    Alsaggaf, Sarah
    Alhamdan, Khalid
    Amer, Moh R.
    ADVANCED FUNCTIONAL MATERIALS, 2022, 32 (12)
  • [42] Manipulation of room-temperature magnetic skyrmions in a van der Waals ferromagnet Fe3GaTe2
    Yin, Yanlong
    Liu, Minghe
    Li, Wei
    Li, Wan
    Zou, Mengting
    Wu, Si
    Xia, Weixing
    Wang, Baomin
    NEW JOURNAL OF PHYSICS, 2025, 27 (01):
  • [43] Room-Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets
    Hu, Guojing
    Guo, Hui
    Lv, Senhao
    Li, Linxuan
    Wang, Yunhao
    Han, Yechao
    Pan, Lulu
    Xie, Yulan
    Yu, Weiqi
    Zhu, Ke
    Qi, Qi
    Xian, Guoyu
    Zhu, Shiyu
    Shi, Jinan
    Bao, Lihong
    Lin, Xiao
    Zhou, Wu
    Yang, Haitao
    Gao, Hong-jun
    ADVANCED MATERIALS, 2024, 36 (27)
  • [44] Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO
    Chen, Rui
    Luo, Fuchuan
    Liu, Yuzi
    Song, Yu
    Dong, Yu
    Wu, Shan
    Cao, Jinhua
    Yang, Fuyi
    N'Diaye, Alpha
    Shafer, Padraic
    Liu, Yin
    Lou, Shuai
    Huang, Junwei
    Chen, Xiang
    Fang, Zixuan
    Wang, Qingjun
    Jin, Dafei
    Cheng, Ran
    Yuan, Hongtao
    Birgeneau, Robert J.
    Yao, Jie
    NATURE COMMUNICATIONS, 2021, 12 (01)
  • [45] Room-temperature low-threshold avalanche effect in stepwise van-der-Waals homojunction photodiodes
    Wang, Hailu
    Xia, Hui
    Liu, Yaqian
    Chen, Yue
    Xie, Runzhang
    Wang, Zhen
    Wang, Peng
    Miao, Jinshui
    Wang, Fang
    Li, Tianxin
    Fu, Lan
    Martyniuk, Piotr
    Xu, Jianbin
    Hu, Weida
    Lu, Wei
    NATURE COMMUNICATIONS, 2024, 15 (01)
  • [46] Van der Waals Epitaxy Growth of 2D Single-Element Room-Temperature Ferromagnet
    Jiang, Jian
    Cheng, Ruiqing
    Feng, Wenyong
    Yin, Lei
    Wen, Yao
    Wang, Yanrong
    Cai, Yuchen
    Liu, Yong
    Wang, Hao
    Zhai, Baoxing
    Liu, Chuansheng
    He, Jun
    Wang, Zhenxing
    ADVANCED MATERIALS, 2023, 35 (19)
  • [47] Tunable room-temperature ferromagnetism in Co-doped two-dimensional van der Waals ZnO
    Rui Chen
    Fuchuan Luo
    Yuzi Liu
    Yu Song
    Yu Dong
    Shan Wu
    Jinhua Cao
    Fuyi Yang
    Alpha N’Diaye
    Padraic Shafer
    Yin Liu
    Shuai Lou
    Junwei Huang
    Xiang Chen
    Zixuan Fang
    Qingjun Wang
    Dafei Jin
    Ran Cheng
    Hongtao Yuan
    Robert J. Birgeneau
    Jie Yao
    Nature Communications, 12
  • [48] Dynamic Behavior of Above-Room-Temperature Robust Skyrmions in 2D Van der Waals Magnet
    Shi, Hanqing
    Zhang, Jingwei
    Xi, Yilian
    Li, Heping
    Chen, Jingyi
    Ahmed, Iftikhar
    Ma, Zhijie
    Cheng, Ningyan
    Zhou, Xiang
    Jin, Haonan
    Zhou, Xinyi
    Liu, Jiaqi
    Sun, Ying
    Wang, Jianfeng
    Li, Jun
    Yu, Ting
    Hao, Weichang
    Zhang, Shilei
    Du, Yi
    NANO LETTERS, 2024, 24 (36) : 11246 - 11254
  • [49] Van der Waals Epitaxial Growth of 2D Layered Room-Temperature Ferromagnetic CrS2
    Xiao, Han
    Zhuang, Wenzhuo
    Loh, Leyi
    Liang, Tao
    Gayen, Anabil
    Ye, Peng
    Bosman, Michel
    Eda, Goki
    Wang, Xuefeng
    Xu, Mingsheng
    ADVANCED MATERIALS INTERFACES, 2022, 9 (30)
  • [50] Room-temperature unconventional topological Hall effect in a van der Waals ferromagnet Fe3GaTe2
    Algaidi, Hanin
    Zhang, Chenhui
    Liu, Chen
    Ma, Yinchang
    Zheng, Dongxing
    Li, Peng
    Zhang, Xixiang
    APL MATERIALS, 2025, 13 (01):