Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks

被引：3

作者：

Sun, Yu ^{[1
]}

Schwarzenbach, Walter ^{[2
]}

Yuan, Sicong ^{[1
]}

Chen, Zhuo ^{[1
]}

Yang, Yanbin ^{[3
]}

Nguyen, Bich-Yen ^{[2
]}

Gao, Dawei ^{[1
]}

Zhang, Rui ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Micro & Nanoelect, Hangzhou 311215, Peoples R China

[2] Soitec, Parc Technol Fontaines, Chemin Franques, F-38190 Bernin, France

[3] Zhijiang Intelligence Inst, Chengdu 610213, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2023年 / 11卷

关键词：

MOSFET; Thermal variables control; Negative bias temperature instability; Stress; Logic gates; Behavioral sciences; Germanium; Germanium-on-Insulator (Ge-OI); metal-oxide-semiconductor field-effect transistor (MOSFET); negative-bias temperature instability (NBTI); RELIABILITY; PERFORMANCE; CHALLENGES; INTERFACE; MOBILITY; MOSFETS; CMOS;

D O I：

10.1109/JEDS.2023.3260978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the NBTI stress of Ge-OI pMOSFETs. The lower NBTI is confirmed for the Ge-OI pMOSFETs with a thinner channel, due to the reduction of the band bending of E-v under a fixed electrical field of NBTI stress. Thus, the channel thickness scaling could be an effective method to improve the NBTI reliability for Ge-OI pMOSFETs.

引用

页码：210 / 215

页数：6

共 50 条

[41] Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
Cho, In-Tak
Cheong, Woo-Seok
Hwang, Chi-Sun
Lee, Jeong-Min
Kwon, Hyuck-In
Lee, Jong-Ho
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (08) : 828 - 830
[42] Band alignment of Hf-Zr oxides on Al2O3/GeO2/Ge stacks
Fadida, S.
Eizenberg, M.
Nyns, L.
Van Elshocht, S.
Caymax, M.
MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1557 - 1559
[43] Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks
Zoubenko, Ekaterina
Iacopetti, Sara
Weinfeld, Kamira
Kauffmann, Yaron
Van Cleemput, Patrick
Eizenberg, Moshe
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2021, 39 (04):
[44] The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks
Seo, Yujin
Lee, Tae In
Yoon, Chang Mo
Park, Bo-Eun
Hwang, Wan Sik
Kim, Hyungjun
Yu, Hyun-Yong
Cho, Byung Jin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3303 - 3307
[45] Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing
Zhu, Yunna
Wang, Xinglu
Liu, Chen
Wang, Tao
Chen, Hongyan
Wang, Wei-Hua
Cheng, Yahui
Wang, Weichao
Wang, Jiaou
Wang, Shengkai
Cho, Kyeongjae
Liu, Hui
Lu, Hongliang
Dong, Hong
SURFACES AND INTERFACES, 2017, 9 : 51 - 57
[46] Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs
Chagarov, Evgueni A.
Kummel, Andrew C.
SURFACE SCIENCE, 2009, 603 (21) : 3191 - 3200
[47] A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
Krylov, Igor
Pokroy, Boaz
Ritter, Dan
Eizenberg, Moshe
JOURNAL OF APPLIED PHYSICS, 2016, 119 (08)
[48] Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks
Tang, Kechao
Roberto Palumbo, Felix
Zhang, Liangliang
Droopad, Ravi
McIntyre, Paul C.
ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (08) : 7819 - 7825
[49] White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses
Zhao, Hongda
Zheng, Zhongshan
Zhu, Huiping
Wang, Lei
Li, Bo
Zhang, Zichen
Wang, Shanfeng
Yuan, Qingxi
Jiao, Jian
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 23 (01) : 109 - 115
[50] Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics
Li, Yue
Chen, Yonghe
Sun, Tangyou
Zhang, Fabi
Cao, Mingmin
Li, Qi
Fu, Tao
Xiao, Gongli
Liu, Yingbo
Liu, Honggang
Li, Haiou
APPLIED PHYSICS EXPRESS, 2020, 13 (01)

← 1 2 3 4 5 →