Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks

被引：3

作者：

Sun, Yu ^{[1
]}

Schwarzenbach, Walter ^{[2
]}

Yuan, Sicong ^{[1
]}

Chen, Zhuo ^{[1
]}

Yang, Yanbin ^{[3
]}

Nguyen, Bich-Yen ^{[2
]}

Gao, Dawei ^{[1
]}

Zhang, Rui ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Micro & Nanoelect, Hangzhou 311215, Peoples R China

[2] Soitec, Parc Technol Fontaines, Chemin Franques, F-38190 Bernin, France

[3] Zhijiang Intelligence Inst, Chengdu 610213, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2023年 / 11卷

关键词：

MOSFET; Thermal variables control; Negative bias temperature instability; Stress; Logic gates; Behavioral sciences; Germanium; Germanium-on-Insulator (Ge-OI); metal-oxide-semiconductor field-effect transistor (MOSFET); negative-bias temperature instability (NBTI); RELIABILITY; PERFORMANCE; CHALLENGES; INTERFACE; MOBILITY; MOSFETS; CMOS;

D O I：

10.1109/JEDS.2023.3260978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the NBTI stress of Ge-OI pMOSFETs. The lower NBTI is confirmed for the Ge-OI pMOSFETs with a thinner channel, due to the reduction of the band bending of E-v under a fixed electrical field of NBTI stress. Thus, the channel thickness scaling could be an effective method to improve the NBTI reliability for Ge-OI pMOSFETs.

引用

页码：210 / 215

页数：6

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