Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks

被引：3
|
作者：
Sun, Yu [1 ]
Schwarzenbach, Walter [2 ]
Yuan, Sicong [1 ]
Chen, Zhuo [1 ]
Yang, Yanbin [3 ]
Nguyen, Bich-Yen [2 ]
Gao, Dawei [1 ]
Zhang, Rui [1 ]
机构：
[1] Zhejiang Univ, Sch Micro & Nanoelect, Hangzhou 311215, Peoples R China
[2] Soitec, Parc Technol Fontaines, Chemin Franques, F-38190 Bernin, France
[3] Zhijiang Intelligence Inst, Chengdu 610213, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2023年 / 11卷
关键词：
MOSFET; Thermal variables control; Negative bias temperature instability; Stress; Logic gates; Behavioral sciences; Germanium; Germanium-on-Insulator (Ge-OI); metal-oxide-semiconductor field-effect transistor (MOSFET); negative-bias temperature instability (NBTI); RELIABILITY; PERFORMANCE; CHALLENGES; INTERFACE; MOBILITY; MOSFETS; CMOS;
D O I：
10.1109/JEDS.2023.3260978
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the NBTI stress of Ge-OI pMOSFETs. The lower NBTI is confirmed for the Ge-OI pMOSFETs with a thinner channel, due to the reduction of the band bending of E-v under a fixed electrical field of NBTI stress. Thus, the channel thickness scaling could be an effective method to improve the NBTI reliability for Ge-OI pMOSFETs.
引用
收藏
页码：210 / 215
页数：6
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