Temperature Effect on GaN Threshold Displacement Energy Under Low-Energy Electron Beam Irradiation

Using ab initio molecular dynamics (AIMD), the cascade collision process in GaN irradiated by low-energy electron beam and the temperature effect on the threshold displacement energy (TDE) are investigated. The temperature effect of the TDE is found to exhibit different patterns for Ga and N primary knock-on atoms (PKAs). In the considered energy range of initial kinetic energy (40 to 80 eV), displacements induced by Ga PKA show high uncertainty, i.e., the TDE energy strongly depends on the initial configurations, and kinetic energies higher than TDE does not ensure the displacements that form defects. On the contrary, temperature shows relatively small effect on its TDE and displacement induced by N PKAs, which can essentially occur when the PKA kinetic energy is higher than the TDE. Such different effects are possibly due to the different atomic radii of the two elements and the different energy barriers to overcome. Ga PKAs, which have larger atomic radii, are relatively difficult to stabilize in the crystal and tend to relax to its original position with the assistance of thermal vibrations, and vice versa for N PKAs. The simulation results provide a new understanding of TDE and the cascade collisions of PKAs in GaN at finite temperatures, which can be instructive for improving the radiation resistance of GaN devices. The cascade collision process in GaN irradiated by low-energy electron beam and the threshold displacement energies (TDE) are investigated using AIMD. The TDEs of Ga are found to be dependent on temperature, while those of N are not. The induced defect configurations are also determined for low-energy electron beams. image