Facing the key challenges of two-dimensional electronics

被引：3
|
作者：
Li, Qiang [1 ]
Wang, Jinlan [1 ,2 ]
机构：
[1] Southeast Univ, Sch Phys, Key Lab Quantum Mat & Devices, Minist Educ, Nanjing 21189, Peoples R China
[2] Suzhou Lab, Suzhou, Peoples R China
来源：
MATTER | 2023年 / 6卷 / 08期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/j.matt.2023.05.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomically thin two-dimensional (2D) materials enable advancing Moore's Law, yet creating these remains challenging in terms of ma-terial synthesis and architecture fabrication. In the issue of Nature Materialsand Nature, Peng and co-workers reported facile methods for the synthesis of single-crystalline high -K layered dielectrics and the fabrication of 2D fin field-effect transistors (FinFETs).
引用
收藏
页码：2496 / 2498
页数：3
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