Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing

被引：0

作者：

Liu, Meihua ^{[1
,2
]}

Zhang, Yong ^{[1
]}

Huang, Guoyong ^{[2
]}

机构：

[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China

[2] SMiT, Shenzhen, Peoples R China

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

MIS-HEMT; post-growth annealing and dynamic ON-resistance;

D O I：

10.1109/EDTM55494.2023.10103090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride (SiNx) post-growth annealing process after LPCVD. When the post-growth annealing in O-2 at 650 degrees C, the dynamic ON-resistance (RON) is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.

引用

页数：3

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