Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing

We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride (SiNx) post-growth annealing process after LPCVD. When the post-growth annealing in O-2 at 650 degrees C, the dynamic ON-resistance (RON) is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.