Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing

被引：0
|
作者：
Liu, Meihua [1 ,2 ]
Zhang, Yong [1 ]
Huang, Guoyong [2 ]
机构：
[1] Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen, Peoples R China
[2] SMiT, Shenzhen, Peoples R China
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
MIS-HEMT; post-growth annealing and dynamic ON-resistance;
D O I：
10.1109/EDTM55494.2023.10103090
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a systematic investigation on the fabrication of AlGaN/GaN MIS-HEMTs with silicon nitride (SiNx) post-growth annealing process after LPCVD. When the post-growth annealing in O-2 at 650 degrees C, the dynamic ON-resistance (RON) is only 30% increase at 600 V drain bias, while the RON increases by 8 times at 100 V drain bias for the MIS-HEMT without post-growth annealing. Post-growth annealing can improve the reliability of device.
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页数：3
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