Quaternary alloyed quantum dots with a wide-ranging tunable emission for high color-rendering white light-emitting diodes

被引：4

作者：

Fang, Zixin ^{[1
]}

Huang, Yan ^{[1
]}

Cheng, Sunhuizi ^{[1
]}

Zhu, Quanshui ^{[1
]}

Zhang, Weiwei ^{[1
]}

Zhao, Feng ^{[2
]}

Huang, Gaoxiang ^{[1
]}

Jiang, Guangyu ^{[1
]}

Li, Feng ^{[1
]}

机构：

[1] Nanchang Hangkong Univ, Key Lab Optoelect Informat Sci & Technol Jiangxi P, Nanchang 330063, Peoples R China

[2] Jiangxi Sci & Technol Normal Univ, Sch Chem & Chem Engn, Nanchang 330013, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 932卷

基金：

中国国家自然科学基金;

关键词：

Alloyed quantum dots; Light -emitting diodes; Silica shell; IN-S; NANOCRYSTALS; TEMPERATURE; EFFICIENT; TERNARY; AGINS2; ROBUST;

D O I：

10.1016/j.jallcom.2022.167608

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quaternary alloyed quantum dots (QDs) Ag-Zn-In-S(AZIS)/ZnS were prepared by using of heating-up method for the synthesis of AZIS cores followed by a hot-injection method for the shelling of ZnS. By regulating the Ag:Zn:In ratio, the peak emissions of the resulted AZIS/ZnS QDs exhibited an unreported wide ranging tunable emission from 475 nm to 645 nm. With the increasing silver components, redshift in the photoluminescence spectrum was observed. White light-emitting diodes (WLEDs) were fabricated successfully by employing the yellow-green emission AZIS/ZnS QDs and the combination of the green and the red emission ones as color converters respectively. These devices showed satisfied luminescent prop-erties including a highest color-rending index of 88 accompanied by a corelated color temperature of 3260 K. However, AZIS/ZnS QDs integrated on the chips exhibited large redshift compared to their solution states. This redshift was suppressed remarkably by coating the as synthesized AZIS/ZnS QDs with a silica shell using the hydrolysis of tetramethoxysilane (TMOS). The WLEDs based on silica-coated AZIS/ZnS QDs showed an ultrahigh CRI of 96.3 accompanied by a CCT of 3653 K and good resistance to the invasion of room temperature and humidity after placed under room environment for 11 months. Possessing no heavy metal elements and satisfied luminescent properties combined with good resistance to the invasion of room temperature and humidity in devices make AZIS/ZnS QDs be expected to play a critical role in various applications of lighting.(c) 2022 Elsevier B.V. All rights reserved.

引用

页数：11

共 46 条

[41] Facile Synthesis of Cadmium-Free Zn-In-S:Ag/ZnS Nanocrystals for Bio-Imaging [J].