Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

被引：6

作者：

Bonaldo, Stefano ^{[1
]}

Zhang, En Xia ^{[2
]}

Mattiazzo, Serena ^{[3
,4
]}

Paccagnella, Alessandro ^{[1
]}

Gerardin, Simone ^{[1
]}

Schrimpf, Ronald D. ^{[2
]}

Fleetwood, Daniel M. ^{[2
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-38134 Padua, Italy

[2] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[3] Univ Padua, Dept Phys & Astron, I-38134 Padua, Italy

[4] INFN Sez Padova, I-38134 Padua, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2023年 / 70卷 / 08期

关键词：

MODFETs; HEMTs; Radiation effects; Degradation; Wide band gap semiconductors; Aluminum gallium nitride; Annealing; AlGaN high-electron-mobility transistors (HEMTs); bias condition; charge trapping; dc; low-frequency noise; total ionizing dose (TID); LOW-FREQUENCY NOISE; 1/F NOISE; MOS; DEFECTS; DEGRADATION; VOLTAGE; STRESS; TRAPS;

D O I：

10.1109/TNS.2023.3237179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total-ionizing-dose (TID) effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) are evaluated by dc and low-frequency noise measurements. Devices with and without passivation layers are irradiated with 10-keV X-rays up to 100 Mrad(SiO2) under different bias conditions. Irradiated devices show significant electrical shifts in threshold voltage and transconductance. At doses <10 Mrad(SiO2), the TID-induced effects are related to the passivation of preexisting acceptor-like defects via hole capture, which induces negative threshold voltage shifts and improvement of transconductance. At doses >10 Mrad(SiO2), dehydrogenation of defects and impurity complexes leads to the creation of acceptor-like defects, which degrade the transconductance, shift positively the threshold voltage, and increase the low-frequency noise. Effects are enhanced in unpassivated devices and when the gate is biased at high voltage.

引用

页码：2042 / 2050

页数：9

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