Terahertz sum-frequency excitation of coherent optical phonons in the two-dimensional semiconductor WSe2

被引:0
作者
Kusaba, Satoshi [1 ,2 ]
Lin, Haw-Wei [3 ]
Tamaki, Ryo [1 ]
Katayama, Ikufumi [1 ,4 ]
Takeda, Jun [1 ,4 ]
Blake, Geoffrey A. [2 ,3 ]
机构
[1] Yokohama Natl Univ, Grad Sch Engn Sci, Dept Phys, Yokohama 2408501, Japan
[2] CALTECH, Div Geol & Planetary Sci, Pasadena, CA 91125 USA
[3] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA
[4] Yokohama Natl Univ, Inst Multidisciplinary Sci, Semicond & Quantum Integrated Elect Res Ctr, Yokohama 2408501, Japan
基金
美国国家科学基金会;
关键词
HIGH-HARMONIC GENERATION; VALLEY POLARIZATION; LATTICE-DYNAMICS; MOS2; LIGHT; MONO; SPECTROSCOPY; STATES;
D O I
10.1063/5.0191558
中图分类号
O59 [应用物理学];
学科分类号
摘要
Driving fundamental excitations via strong light fields is one of the most important issues in solid state physics, which opens up new avenues to control material properties. Two-dimensional materials are fruitful platforms for future semiconductor applications, including opto-electronic and phononic devices, yet the phonon dynamics and nonlinear phonon-phonon coupling remain under-explored. Here, we demonstrate coherent phonon excitation in thin films of the layered two-dimensional semiconductor WSe2 induced by intense and broadband ultrafast terahertz (THz) pulses. We performed THz Kerr effect spectroscopy and observed coherent phonon oscillations assigned to the E-2g optical phonon mode. The phonon amplitude displays a quadratic THz field strength dependence, indicating a sum-frequency THz excitation process. Furthermore, pump-probe polarization and crystal orientation relationships, supported by symmetry analysis of the nonlinear susceptibility and Raman tensors, provide helpful insight into non-linear phonon-phonon interactions and potential coherent control schemes for the manipulation of phonon polarization and material properties in WSe2.
引用
收藏
页数:7
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