Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb High Electron Mobility Transistor Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

被引：4

作者：

Endoh, Akira ^{[1
]}

Hatori, Koharu ^{[1
]}

Kishimoto, Naoyuki ^{[1
]}

Hiraoka, Mizuho ^{[1
]}

Kemmochi, Yuta ^{[1
]}

Endoh, Yuki ^{[1
]}

Osawa, Koki ^{[1
]}

Hayashi, Takuya ^{[1
]}

Machida, Ryuto ^{[1
]}

Watanabe, Issei ^{[2
]}

Yamashita, Yoshimi ^{[2
]}

Hara, Shinsuke ^{[2
]}

Kasamatsu, Akifumi ^{[2
]}

Fujishiro, Hiroki I. ^{[1
]}

机构：

[1] Tokyo Univ Sci, Dept Appl Elect, 6-3-1 Niijuku,Katsushika Ku, Tokyo 1258585, Japan

[2] Natl Inst Informat & Commun Technol NICT, Adv ICT Res Inst, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2023年 / 220卷 / 08期

关键词：

conduction band discontinuity; electron mobility; high electron mobility transistors; molecular beam epitaxy; sheet electron density; strain; threading dislocation density; SCATTERING;

D O I：

10.1002/pssa.202200529

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaInSb is one of the attractive Sb-based channel materials for high electron mobility transistors (HEMTs) that can operate in the terahertz band. The effect of strain in the channel on the electron transport properties of Ga1-xInxSb channel HEMT structures (x = 0.60, 0.78, 0.85, 0.90, and 0.94) with the strained-Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer is investigated. The strain in the Ga1-xInxSb channel layer is determined by the lattice constant of Al0.25In0.75Sb lower buffer layer. The electron mobility (mu) shows the maximum value of 15 100 cm(2) V-1 s(-1) at x = 0.78 (unstrained), which has the minimum threading dislocation density (TDD). The value for sheet electron density (N-s) increases with decreasing x, and saturates at about 2.1 x 10(12) cm(-2) when unstrained or tensile strained. The minimum sheet resistance (R-s) is 202 Omega/rectangle for the unstrained Ga0.22In0.78Sb channel.

引用

页数：5

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