The coexistence of high piezoelectricity and superior optical absorption in Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) monolayers

被引:7
作者
Cao, Shu-Hao [1 ]
Zhang, Tian [2 ]
Geng, Hua-Yun [3 ]
Chen, Xiang-Rong [1 ]
机构
[1] Sichuan Univ, Coll Phys, Inst Atom & Mol Phys, Chengdu 610064, Peoples R China
[2] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610066, Peoples R China
[3] CAEP, Inst Fluid Phys, Natl Key Lab Shock Wave & Detonat Phys Res, Mianyang 621900, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRON-HOLE EXCITATIONS; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; 2-DIMENSIONAL MATERIALS; SEMICONDUCTORS; COEFFICIENT; TRANSITION; BI2TE2SE; SPECTRA; BI2SE3;
D O I
10.1039/d3cp05514k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Bismuth chalcogenide and its derivatives have been attracting attention in various fields as semiconductors or topological insulators. Inspired by the high piezoelectric properties of Janus Bi2TeSeS monolayer and the excellent optical absorption properties of the Bi2X3 (X = Te, Se, S) monolayers, we theoretically predicted four new-type two-dimensional (2D) monolayers Janus Bi2X2Y (X = Te, Se; Y = Te, Se, S) using the first principles combined with density functional theory (DFT). The thermal, dynamic, and mechanical stabilities of Janus Bi2X2Y monolayers were confirmed based on ab initio molecular dynamics (AIMD) simulations, phonon dispersion, and elastic constants calculations. Their elastic properties, band structures, piezoelectric, and optical properties were systematically investigated. It was found that Janus Bi2X2Y monolayers have a typical Mexican hat-shaped valence band edge structure and, therefore, have a ring-shaped flat band edge, which results in their indirect band gaps. The results show that Janus Bi2X2Y monolayers are semiconductors with moderate band gaps (0.62-0.98 eV at the HSE + SOC level). After considering the electron-phonon renormalization (EPR), the band gaps are reduced by less than 5% at 0 K under the zero-point renormalization (ZPR) and further reduced by approximately 10% at 300 K. Besides, Janus Bi2X2Y monolayers also exhibit excellent optical absorption properties in the blue-UV light region, with the peak values at the order of 8 x 10(5) cm(-1). Particularly, the Janus Bi2Te2S monolayer was found to exhibit a piezoelectric strain coefficient d(11) of up to 20.30 pm V-1, which is higher than that of most of the 2D materials. Our results indicate that Janus Bi2X2Y monolayers could be promising candidates in solar cells, optical absorption, and optoelectronic devices; especially, a Janus Bi2Te2S monolayer can also be an excellent piezoelectric material with great prospects in the fields of mechanical and electrical energy conversion.
引用
收藏
页码:4629 / 4642
页数:14
相关论文
共 50 条
[41]   XYZ2 (X/Y = Ge, Pb, Sn; Z = Se, S, Te) two-dimensional Janus monolayers for photocatalytic water splitting: A first-principles study [J].
Yu, Zhigang ;
Xu, Furong ;
Dai, Songli ;
Wang, Heng ;
Xiao, Shiyu ;
Tian, Zean .
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2025, 709
[42]   Harnessing intrinsic electric fields in 2D Janus MoOX (X=S, Se, and Te) monolayers for enhanced photocatalytic hydrogen evolution [J].
Haman, Zakaryae ;
Kibbou, Moussa ;
Khossossi, Nabil ;
Ouabida, Elhoussaine ;
Dey, Poulumi ;
Essaoudi, Ismail ;
Ainane, Abdelmajid .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2024, 68 :566-574
[43]   Engineering the electronic and optoelectronic properties of InX (X = S, Se, Te) monolayers via strain [J].
Jin, Hao ;
Li, Jianwei ;
Dai, Ying ;
Wei, Yadong .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2017, 19 (06) :4855-4860
[44]   Large in-plane and out-of-plane piezoelectricity in 2D?-LiMX2 (M=Al, Ga and In; X=S, Se and Te) monolayers [J].
Lv, Qiaoya ;
Qiu, Jian ;
Wen, Quan ;
Li, Dongling ;
Zhou, Yuanyuan ;
Lu, Guofeng .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 154
[45]   The magnetic properties in two-dimensional Cr2X2Y6 (X=Ge, Si; Y=Te, Se) modulated by strain and electric field [J].
Yu, Weiyang ;
Zhang, Yuling ;
Luo, Wen ;
Zhang, Xiaoli ;
Wu, Yali ;
Li, Rui ;
Zhang, Wei-Bing .
PHYSICA B-CONDENSED MATTER, 2025, 697
[46]   Electronic structure of ZrX2 (X = Se, Te) [J].
Shkvarin, A. S. ;
Merentsov, A. I. ;
Shkvarina, E. G. ;
Yarmoshenko, Yu. M. ;
Pis, I. ;
Nappini, S. ;
Titov, A. N. .
JOURNAL OF CHEMICAL PHYSICS, 2018, 148 (12)
[47]   The electronic and optical properties of MoS2(1-x)Se2x and MoS2(1-x)Te2x monolayers [J].
Rajbanshi, Biplab ;
Sarkar, Sunandan ;
Sarkar, Pranab .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (39) :26166-26174
[48]   High-temperature ferromagnetism in monolayers MnGaX3 (X = Te, Se) [J].
Zeng, Hanghang ;
Bao, Yijiang ;
Chen, Zhiguo ;
Hu, Yan ;
Wang, Jiahui ;
Fan, Xiaoli .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2021, 534
[49]   Negative Poisson's ratio and anisotropic carrier mobility in ternary Janus Si2XY (X/Y = S, Se, Te): First-principles prediction [J].
Hiep, Nguyen T. ;
Nguyen, Cuong Q. ;
Hieu, Nguyen N. .
APPLIED PHYSICS LETTERS, 2023, 123 (09)
[50]   Two-dimensional Janus BiXY (X = Se, Te; Y--I, Br, Cl) for photocatalytic water splitting [J].
Fan, Lu-Ning ;
Han, Kun ;
Lu, Qiang ;
Zhang, Huai-Jin ;
Tian, Yuping ;
Gong, Wei-Jiang .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2025, 150