Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications

被引：6

作者：

Jebalin, Binola K. ^{[1
]}

Gifta, G. ^{[1
]}

Angen, S. ^{[2
]}

Prajoon, P. ^{[3
]}

Nirmal, D. ^{[2
]}

机构：

[1] Karunya Inst Technol & Sci, Dept Biomed Engn, Coimbatore, Tamilnadu, India

[2] Karunya Inst Technol & Sci, Dept Elect & Commun Engn, Coimbatore, Tamilnadu, India

[3] Jyothi Engn Coll, Cheruthuruthy, Kerala, India

来源：

MICROELECTRONICS JOURNAL | 2023年 / 138卷

关键词：

AlGaN; Breakdown voltage; Schottky contact; Field plate engineering; GaN; HEMT; ALGAN/GAN HEMTS; GANHEMTS;

D O I：

10.1016/j.mejo.2023.105866

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work intends to improve the GaN HEMT device breakdown voltage, by uniformly distributing peak electric field using field plate engineering technique. A peak electric field reduction is observed by adding field plate at the gate end along with remolding the distribution of electric field linearly. The device breakdown voltage is improved by gradual decrease in electric field is observed. To analyze the OFF-state breakdown voltage, the gate field plate of various lengths is used and optimum size is calculated for GaN HEMTs. A breakdown voltage of 350 V is prominently observed in the simulation results. Moreover, the obtained results show a good substantiation with experimental data. The DC Characteristics and AC characteristics of the proposed structure exhibit an enhanced performance than the existing structures, justifying the GaN field plated HEMT as to be a promising solution for Microwave monolithic Integrated Circuit applications.

引用

页数：5

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