Density of amorphous sputtered Ge2Sb2Te5 thin films

The density, crystallinity, and microstructure of reactively sputtered amorphous Ge2Sb2Te5 thin films have been assessed as a function of deposition temperature. The continuous density increase was observed with increasing substrate temperature between room temperature and 200 ?. The films deposited at room temperature are amorphous and exhibit a columnar structure with a lateral size of cells in the 10-15 nm range. Cells consist of high-density interior with boundaries with the density lower by similar to 9% due to incorporation of pores. The pores and the columnar microstructure can be eliminated by deposition at 80 ? while still preserving the amorphous phase. The density of pore- and stress-free amorphous Ge2Sb2Te5 is 6.16 g/cm(3) and is only 1.5% lower than the crystalline Ge2Sb2Te5 with NaCl structure.