Influence of substrate temperature on the properties of ZnTe:Cu films prepared by a magnetron co-sputtering method

被引:5
作者
Hongwei Li [1 ]
Haofei Huang [1 ]
Azhati Lina [1 ]
Ke Tang [1 ,2 ]
Zhuorui Chen [1 ,3 ]
Zilong Zhang [3 ]
Ke Xu [1 ]
Keke Ding [1 ]
Linjun Wang [1 ,2 ,4 ]
Jian Huang [1 ,2 ,4 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
[2] SHU, Zhejiang Inst Adv Mat, Jiashan 314113, Peoples R China
[3] Natl Inst Mat Sci NIMS, Res Ctr Funct Mat, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan
[4] Shanghai Collaborat Innovat Ctr Intelligent Sensi, Shanghai, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnTe:Cu film; Magnetron co-sputtering; Substrate temperature; Electrical properties; CU-DOPED ZNTE; THIN-FILMS; ELECTRICAL-PROPERTIES; GROWTH; CONTACT; CDTE; DEPENDENCE; IMMERSION; LAYERS;
D O I
10.1016/j.heliyon.2023.e23349
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Copper-doped Zinc Tellurium (ZnTe:Cu) films were deposited on borosilicate glass using magnetron co-sputtering technique. The influence of the substrate temperature on the structural, morphological, optical and electrical properties of ZnTe:Cu films was investigated by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-Vis spectrophotometer and Hall effect measurement system. The results indicate that substrate temperature significantly affects the properties of the ZnTe:Cu films. When the substrate temperature increases from room temperature to 600 degrees C, the (111)-preferred orientation of ZnTe:Cu films is gradually replaced by the (220)-preferred orientation. At high substrate temperatures (>= 500 degrees C), the CuxTe phase appears in the ZnTe:Cu films, resulting in higher carrier concentration (>10(19) cm(-3)) and lower resistivity (<10(-2) Omega cm) of the prepared films.
引用
收藏
页数:10
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