In-situ crystalline TiNi thin films deposited by HiPIMS at a low substrate temperature

被引：6

作者：

Bai, Xuebing ^{[1
]}

Cai, Qun ^{[1
]}

Xie, Wenhao ^{[1
]}

Zeng, Yuqiao ^{[1
]}

Chu, Chenglin ^{[1
]}

Zhang, Xuhai ^{[1
]}

机构：

[1] Southeast Univ, Sch Mat Sci & Engn, Jiangsu Key Lab Adv Met Mat, Nanjing 211189, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2023年 / 455卷

基金：

中国国家自然科学基金;

关键词：

TiNi thin films; Crystallization; HiPIMS; A low substrate temperature; MARTENSITIC PHASE-TRANSFORMATIONS; MEMORY ALLOY-FILMS; MEMS APPLICATIONS; STRAIN FIELDS; BEHAVIOR; MICROSTRUCTURE; EVOLUTION; KINETICS;

D O I：

10.1016/j.surfcoat.2022.129196

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnetron sputtered TiNi thin films usually exhibit an amorphous structure and need a high substrate tem-perature (>450 degrees C) or a post-annealing treatment (>500 degrees C) to promote crystallization. However, these treat-ments could extremely limit the use of low melting point substrate materials. In this study, TiNi thin films were prepared by HiPIMS using different deposition parameters. The structure and phase transformation of TiNi films were investigated. Based on SEM, XRD, TEM, DSC and electrical resistivity analysis, results show that it is possible to deposit dense crystalline TiNi thin films at a low substrate temperature (230 degrees C). The crystallization mechanism was also discussed. Ions energy and substrate temperatures significantly affected the formation of crystalline structures.

引用

页数：10

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