The FMR line width and the structure in YIG films deposited by MOD on silicon (100)

被引：6

作者：

Assis, L. K. C. S. ^{[1
]}

Abrao, J. E. ^{[2
]}

Carvalho, A. S. ^{[1
]}

Goncalves, L. A. P. ^{[1
,3
]}

Galembeck, A. ^{[1
,4
]}

Padron-Hernandez, E. ^{[1
,2
]}

机构：

[1] Univ Fed Pernambuco, Posgrad Ciencia Mat, Recife, Pe, Brazil

[2] Univ Fed Pernambuco, Dept Fis, Recife, Pe, Brazil

[3] Inst Fed Pernambuco, Dept Engn Mecan, Recife, Pe, Brazil

[4] Univ Fed Pernambuco, Dept Quim Fundamental, Recife, Pe, Brazil

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2023年 / 568卷

关键词：

YIG; MOD; Thin films; FMR; Microstructure; IRON-GARNET FILMS; MAGNETIC-PROPERTIES; MORPHOLOGY; MICROSTRUCTURE; RELAXATION; Y3FE5O12; GROWTH;

D O I：

10.1016/j.jmmm.2023.170388

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, yttrium-iron garnet (YIG) films deposited on silicon subtract were studied by ferromagnetic resonance (FMR). The samples were prepared by using the Metal-Organic Decomposition (MOD) method on two different thermal treatments (750 degrees C and 850 degrees C). The X-ray diffraction suggested the single phase of YIG while atomic force microscopy and scanning electron microscopy reveled film roughness, R-q < 0.2 nm. The FMR measurements showed very different linewidth of 139 Oe for the sample obtained at 750 degrees C and sample at 850 degrees C had a smaller linewidth of 93 Oe. The difference was mainly attributed to the different structural ordering of the two samples from the heat treatment at different temperatures.

引用

页数：4

共 50 条

[31] STRUCTURE AND WORK FUNCTION OF SILICON FILMS ON (100) FACE OF TUNGSTEN
BOIKO, BA
GORODETSKII, DA
FIZIKA TVERDOGO TELA, 1976, 18 (11): : 3185 - 3190
[32] Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD Below 100 °C
Song, Tae-Ho
Keum, Ki-Su
Kang, Sin-Young
Park, Jung-Hoon
Kim, Jin-Hoon
Hong, Wan-Shick
THIN FILM TRANSISTORS 11 (TFT 11), 2012, 50 (08): : 55 - 58
[33] Texture formation of TiN films deposited on (011)[100] single crystal of silicon steel
Inokuti, Y
ISIJ INTERNATIONAL, 1996, 36 (05) : 579 - 583
[34] STRUCTURE OF RECRYSTALLIZED SILICON FILMS PREPARED FROM AMORPHOUS-SILICON DEPOSITED USING DISILANE
HASEGAWA, S
SAKAMOTO, S
INOKUMA, T
KURATA, Y
APPLIED PHYSICS LETTERS, 1993, 62 (11) : 1218 - 1220
[35] Structure and magnetic properties of ultrathin iron films deposited on the CoGa(100) surface
Balster, T
Kovacs, DA
Pflitsch, C
Verheij, LK
David, R
Franchy, R
PHYSICAL REVIEW B, 2002, 66 (18): : 1844061 - 1844065
[36] PREFERRED ORIENTATION AND DOMAIN STRUCTURE OF IRON FILMS DEPOSITED ON (100) COPPER SUBSTRATES
JONES, GA
PHYSICA STATUS SOLIDI, 1967, 19 (02): : 811 - &
[37] Growth and structure of Ti films deposited on chemically polished MgO(100) substrates
Harada, T
Ohkoshi, H
JOURNAL OF CRYSTAL GROWTH, 1997, 171 (3-4) : 433 - 441
[38] STRUCTURE, MAGNETIZATION, AND THERMAL-STABILITY OF (100) FECU FILMS DEPOSITED ON PD/CU/SI(100)
CHANG, CA
JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4443 - 4450
[39] Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD
Zhang, Yiying
Du, Piyi
Zhang, Ran
Han, Gaorong
Weng, Wenjian
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (12-13) : 1435 - 1439
[40] STRUCTURE OF AS-DEPOSITED LPCVD SILICON FILMS AT LOW DEPOSITION TEMPERATURES AND PRESSURES
VOUTSAS, AT
HATALIS, MK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (09) : 2659 - 2665

← 1 2 3 4 5 →