The FMR line width and the structure in YIG films deposited by MOD on silicon (100)

被引:8
作者
Assis, L. K. C. S. [1 ]
Abrao, J. E. [2 ]
Carvalho, A. S. [1 ]
Goncalves, L. A. P. [1 ,3 ]
Galembeck, A. [1 ,4 ]
Padron-Hernandez, E. [1 ,2 ]
机构
[1] Univ Fed Pernambuco, Posgrad Ciencia Mat, Recife, Pe, Brazil
[2] Univ Fed Pernambuco, Dept Fis, Recife, Pe, Brazil
[3] Inst Fed Pernambuco, Dept Engn Mecan, Recife, Pe, Brazil
[4] Univ Fed Pernambuco, Dept Quim Fundamental, Recife, Pe, Brazil
关键词
YIG; MOD; Thin films; FMR; Microstructure; IRON-GARNET FILMS; MAGNETIC-PROPERTIES; MORPHOLOGY; MICROSTRUCTURE; RELAXATION; Y3FE5O12; GROWTH;
D O I
10.1016/j.jmmm.2023.170388
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, yttrium-iron garnet (YIG) films deposited on silicon subtract were studied by ferromagnetic resonance (FMR). The samples were prepared by using the Metal-Organic Decomposition (MOD) method on two different thermal treatments (750 degrees C and 850 degrees C). The X-ray diffraction suggested the single phase of YIG while atomic force microscopy and scanning electron microscopy reveled film roughness, R-q < 0.2 nm. The FMR measurements showed very different linewidth of 139 Oe for the sample obtained at 750 degrees C and sample at 850 degrees C had a smaller linewidth of 93 Oe. The difference was mainly attributed to the different structural ordering of the two samples from the heat treatment at different temperatures.
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页数:4
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