Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD

被引：7

作者：

Vo, Thanh Huong ^{[1
,2
]}

Kim, Sunjae ^{[1
,2
,3
]}

Kim, Hyeong-Yun ^{[3
]}

Park, Ji-Hyeon ^{[3
]}

Jeon, Dae-Woo ^{[3
]}

Hwanga, Wan Sik ^{[1
,2
]}

机构：

[1] Korea Aerosp Univ, Dept Smart Air Mobil, Goyang 10540, South Korea

[2] Korea Aerosp Univ, Dept Mat Sci & Engn, Goyang 10540, South Korea

[3] Korea Inst Ceram Engn & Technol, Jinju 52851, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 173卷

基金：

新加坡国家研究基金会;

关键词：

beta-Ga2O3; Schottky barrier diode; MOCVD; Capacitance-voltage; BETA-GA2O3; SINGLE-CRYSTALS; SCHOTTKY DIODES; FILM;

D O I：

10.1016/j.mssp.2024.108130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the thin film quality of the epitaxial layer on Sn-doped (001)-oriented beta-Ga2O3 single crystal substrates. The homoepitaxial layer is grown by metal organic chemical vapor deposition (MOCVD) at 700 degrees C, 800 degrees C, 900 degrees C, and 1000 degrees C. To evaluate the grown epitaxial layer at different temperatures, the depletion layer of the Schottky barrier diode (SBD) is studied using the impedance-phase angle (Z-theta) via capacitance-voltage measurements. In addition, the Z-theta value is correlated with X-ray diffraction and transmission electron microscopy. The results show that the epitaxial layer grown at 900 degrees C has the best epitaxial layer quality. It is presumed that Z-theta measurements are a feasible and reliable approach to evaluate the epitaxial layer in Ga2O3-related devices.

引用

页数：6

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