Deep Ultraviolet CMOS-Controlled Micro Light-Emitting Diode Array

被引:2
作者
McKendry, Jonathan J. D. [1 ]
Xie, Enyuan [1 ]
Hill, Jordan [1 ]
Zimi, Hichem [1 ]
Herrnsdorf, Johannes [1 ]
Gu, Erdan [1 ]
Henderson, Robert K. [2 ]
Dawson, Martin D. [1 ]
机构
[1] Univ Strathclyde, Inst Photon, Dept Phys, Glasgow G1 1RD, Scotland
[2] Univ Edinburgh, Joint Res Inst Integrated Syst, Inst Micro & Nano Syst, Sch Engn, Edinburgh EH9 3JL, Scotland
来源
IEEE PHOTONICS JOURNAL | 2023年 / 15卷 / 06期
基金
英国工程与自然科学研究理事会;
关键词
Optical pulses; Optical variables measurement; Optical sensors; Adaptive optics; Light emitting diodes; Optical device fabrication; Pulse measurements; Complementary metal-oxide-semiconductor (CMOS); GaN; AlGaN; microdisplays; micro-light-emitting diodes (micro-LEDs); ultraviolet sources; LED ARRAY; DISPLAY;
D O I
10.1109/JPHOT.2023.3330571
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a Deep Ultraviolet (DUV) AlGaN micro-light emitting diode (micro-LED) array driven by a matching array of electronic drivers implemented in Complementary Metal-Oxide-Semiconductor (CMOS) technology. This 40 x 10 pixel integrated device required improvements in micro-LED fabrication combined with control over the LED ground level in the custom designed CMOS chip. It allows each of the micro-LEDs, with a measured peak emission wavelength of 271 nm, to be addressed independently in continuous wave (CW) or nanosecond pulsed operation, with optical output powers and pulse energies per pixel of 80 mu W and 0.2 pJ, respectively. Performance of this high-resolution electronically-driven array for multi-channel UV-C wireless communications is given as an example of its potentially wide-ranging uses.
引用
收藏
页码:1 / 6
页数:6
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