Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube p-n Junction

被引:2
作者
Deng, Xiaosong [1 ,2 ]
Gong, Kui [3 ]
Wang, Yin [3 ]
Liu, Zebin [4 ,5 ]
Jiang, Kaili [4 ,5 ]
Kang, Ning [1 ,2 ,6 ]
Zhang, Zhiyong [1 ,2 ]
机构
[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[2] Peking Univ, Ctr Carbon Based Elect, Sch Elect, Beijing 100871, Peoples R China
[3] Hongzhiwei Technol Shanghai Co Ltd, FL6,BLDG C2, 1599, Xinjinqiao Rd, Shanghai, Peoples R China
[4] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[5] Tsinghua Univ, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing 100084, Peoples R China
[6] Hefei Natl Lab, Hefei 230088, Peoples R China
基金
中国国家自然科学基金;
关键词
OSCILLATIONS; TRANSPORT; GROWTH; GAP;
D O I
10.1103/PhysRevLett.130.207002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The precise control and deep understanding of quantum interference in carbon nanotube (CNT) devices are particularly crucial not only for exploring quantum coherent phenomena in clean one-dimensional electronic systems, but also for developing carbon-based nanoelectronics or quantum devices. Here, we construct a double split-gate structure to explore the Aharonov-Bohm (AB) interference effect in individual single-wall CNT p - n junction devices. For the first time, we achieve the AB modulation of conductance with coaxial magnetic fields as low as 3 T, where the flux through the tube is much smaller than the flux quantum. We further demonstrate direct electric-field control of the nonmonotonic magnetoconductance through a gate-tunable built-in electric field, which can be quantitatively understood in combination with the AB phase effect and Landau-Zener tunneling in a CNT p - n junction. Moreover, the nonmonotonic magnetoconductance behavior can be strongly enhanced in the presence of Fabry-Pe ' rot resonances. Our Letter paves the way for exploring and manipulating quantum interference effects with combining magnetic and electric field controls.
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页数:6
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