Broadband Outphasing Power Amplifier Using Doherty-Chireix Continuum in a GaN MMIC Process

被引：3
|
作者：
Mikrut, Dominic [1 ]
Roblin, Patrick [1 ]
Liang, Chenyu [1 ]
Smith, Shane [2 ]
Tantawy, Ramy [2 ]
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] SenseICs, Columbus, OH USA
来源：
2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年
关键词：
Doherty; Chireix; Outphasing Power Amplifier; Doherty-Chrieix Continuum; GaN; MMIC;
D O I：
10.1109/PAWR56957.2023.10046288
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the first experimental investigation of a broadband outphasing power amplifier designed in a 150nm GaN process utilizing the Doherty-Chireix Continuum. Simulations show a peak drain efficiency above 35% from 3.5-7 GHz. Peak drain efficiency was measured to be 53% when using a pulsed-RF signal at 3.5 GHz with a pulse width of 1 mu s and duty rate of 0.1%. Series inductors and shunt capacitors were used to minimize the total die area. The broadband outphasing power amplifier has a total die area of 3mm x 4mm.
引用
收藏
页码：13 / 15
页数：3
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