A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium-gallium-zinc oxide TFTs

被引：1

作者：

Liu, Ping-Che ^{[1
]}

Lin, Po-Jung ^{[1
]}

Chen, Yu-Chi ^{[1
]}

Chen, Chien-Wei ^{[2
]}

Kei, Chi-Chung ^{[2
]}

Li, Pei-Wen ^{[1
]}

Lin, Horng-Chih ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[2] Taiwan Instrument Res Inst TIRI, Natl Appl Res Labs, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 03期

关键词：

oxide semiconductors; thin-film transistor; film-profile engineering; low-temperature processing; atomic layer deposition; indium-gallium-zinc oxide; ATOMIC LAYER DEPOSITION; AL2O3; THIN-FILMS; TRANSISTORS;

D O I：

10.35848/1347-4065/ad2136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We proposed a novel low-temperature (<110 degrees C) process scheme based on the film-profile engineering technique for fabricating indium-gallium-zinc oxide thin-film transistors (TFTs) with both bottom-gated (BG) and double-gated (DG) configurations. An organic photoresist (PR) suspended bridge is constructed to shadow the depositing species during the deposition processes of the bottom gate-oxide, channel, and source/drain metal films. An Al2O3 layer deposited at 110 degrees C using atomic-layer deposition is employed as the bottom gate-oxide layer. Such a low-temperature process allows us to deposit the Al2O3 layer following the formation of the PR suspended bridge, preventing the formation of organic residues between the gate-oxide and channel layers. As a result, excellent device performance in terms of field-effect mobility of 12.1 cm(2) V-1 s(-1) and subthreshold swing of 141 mV/dec is achieved. Our proposed low-temperature process scheme is readily applicable for fabricating DG TFTs which show substantial enhancements in driving currents.

引用

页数：8