High temperature oxidation behavior of ZrNiSn-based half-Heusler thermoelectric material

被引：8
作者：
Wang, Lei [1 ,2 ]
Song, Qingfeng [1 ]
Gu, Jinyu [1 ,2 ]
Wang, Chao [1 ]
Bai, Shengqiang [1 ,2 ]
Chen, Lidong [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
CORROSION SCIENCE | 2023年 / 225卷
基金：
中国国家自然科学基金;
关键词：
Thermoelectric device; Half-Heusler; Oxidation mechanism; Coating; PERFORMANCE; ALLOYS; SCATTERING; FIGURE; MERIT;
D O I：
10.1016/j.corsci.2023.111606
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The peculiar oxidation behavior of Zr0.5Hf0.5NiSn0.985Sb0.015 (ZHNS) under different temperatures has been investigated. ZHNS presents thermal inert at 823-1073 K, but shows large oxidation rate at 723-773 K. The thermodynamic and kinetic analyses reveal that, dense oxidation layer (DOL, composed of ZrO2, HfO2 and Ni3Sn2) is preferentially generated at high temperatures and/or low oxygen pressures, while alternative layers of (ZrO2, HfO2, SnO2)/Ni3Sn2 with abundant cracks at lower temperatures. By pre-oxidization at 873 K in Ar flow, an artificial DOL oxidation-protective coating is fabricated. With this coating, the single-leg thermoelectric de -vice demonstrates excellent stability in air at temperature gradient of 778 K/300 K for 15 days.
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页数：8
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