A lead-free brownmillerite ferroelectric material LiBiFe2O5 (LBFO) has been synthesized via a solid-state reaction technique. Using the procedure of N-TREOR method of X-ray diffraction, the crystal structure of the prepared sample is found to be monoclinic with lattice parameters: a = 13.6726 angstrom, b = 4.1560 angstrom, c = 8.5317 angstrom, and beta = 102.89. Based on analysis of electrical data, the existence of Koop's and Maxwell-Wagner relaxation phenomena and dielectric relaxation in the material has been confirmed. This analysis has also shown a high impact of the dielectric permittivity (epsilon(r)) and low tangent loss (tan delta) on using the material in some electronic devices. A detailed study of the frequency-temperature-dependent ac conductivity has suggested the presence of Jonscher's universal power law in the material. As the material has thermistor constant (beta) values of 4019.26, 11535.75, and 484.36 in different temperature ranges indicating high-temperature NTC thermistor application.
机构:
Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Liu, Bo
Gu, Mu
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Gu, Mu
Liu, Xiaolin
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Liu, Xiaolin
Huang, Shiming
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Huang, Shiming
Ni, Chen
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
机构:
Univ Hassan 1er, FST Settat, LS3M, Settat, Morocco
Mohammed VI Polytech Univ, Mat Sci & Nanoengn, Lot 660 Hay Moulay Rachid, Ben Guerir, MoroccoEquipe Physicochim Matiere Condensee PCMC, Fac Sci Meknes, Meknes, Morocco
机构:
Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Liu, Bo
Gu, Mu
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Gu, Mu
Liu, Xiaolin
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Liu, Xiaolin
Huang, Shiming
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机构:
Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
Huang, Shiming
Ni, Chen
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Tongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R ChinaTongji Univ, Dept Phys, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China
机构:
Univ Hassan 1er, FST Settat, LS3M, Settat, Morocco
Mohammed VI Polytech Univ, Mat Sci & Nanoengn, Lot 660 Hay Moulay Rachid, Ben Guerir, MoroccoEquipe Physicochim Matiere Condensee PCMC, Fac Sci Meknes, Meknes, Morocco