Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor

The elastic constants, bulk modulus, shear modulus, Young's modulus, optical phonon frequencies, and sound velocity for the zinc-blende GaAs have been determined. Furthermore, for the GaAs, the Poisson ratio, anisotropy factor, micro-hardness, and internal strain parameter have been estimated. It has been investigated how the examined features respond to pressure. Our findings are generally in agreement with experimental and theoretical values reported in the literature. Our findings at high-pressure levels could serve as a model for future experimental work. The knowledge gained from this study may be useful in the production of optoelectronic devices that operate under high pressure.