A PN junction application of renewable carbon derived from tea waste biomass on a silicon substrate

In this study, carbon-based semiconductor technology was developed from tea waste biomass as a renewable, environmentally friendly and sustainable carbon source instead of fossil-sourced carbon, and a PN hetero-junction was formed with a P-type carbon layer on an N-type silicon substrate. The structure have the traditional diode characteristics, with a reverse saturation current I-s=0.035 mu A and ideality factor n =14.08. The large value of the ideality factor is attributed to the large series resistance in the structure. Additionally, it was demonstrated that that tea wastes can be considered as a technological product as a carbon source.