New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

被引：2

作者：

Zhu, Kunfeng ^{[1
,2
]}

Zhang, Peijian ^{[3
]}

Xu, Zicheng ^{[4
]}

Wang, Tao ^{[1
]}

Yi, Xiaohui ^{[3
]}

Hong, Min ^{[3
]}

Yang, Yonghui ^{[1
]}

Zhang, Guangsheng ^{[1
]}

Liu, Jian ^{[1
]}

Wei, Jianan ^{[3
]}

Pu, Yang ^{[3
]}

Huang, Dong ^{[1
]}

Luo, Ting ^{[3
]}

Chen, Xian ^{[3
]}

Tang, Xinyue ^{[3
]}

Tan, Kaizhou ^{[3
]}

Chen, Wensuo ^{[2
]}

机构：

[1] Sichuan Inst Solid state Circuits, Semicond Mfg Proc Dev Dept, Chongqing 400060, Peoples R China

[2] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Sec, Chongqing 400044, Peoples R China

[3] Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China

[4] Univ Elect Sci & Technol China, Glasgow Coll, Chengdu 610054, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2023年 / 11卷

关键词：

Stress; Silicon germanium; Degradation; Hot carriers; Low-frequency noise; Silicon; Integrated circuit reliability; Hot carrier; interface defect; current gain; 1; f noise; RANDOM TELEGRAPH SIGNALS; DEGRADATION; ELECTRON; SI/SIO2; RELIABILITY; CENTERS; FIELD;

D O I：

10.1109/JEDS.2023.3239341

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.

引用

页码：30 / 35

页数：6

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