Silicon surface passivation with a-Si:H by PECVD: growth temperature effects on defects and band offset

被引：5
作者：
Nunomura, Shota [1 ]
Sakata, Isao [1 ]
Misawa, Tatsuya [2 ]
Kawai, Shinji [3 ]
Kamataki, Kunihiro [4 ]
Koga, Kazunori [4 ]
Shiratani, Masaharu [4 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Inst Adv Elect & Photon, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
[2] Saga Univ, Fac Sci & Engn, 1 Honjo machi, Saga 8408502, Japan
[3] Ind Technol Ctr Saga, 114 Nabeshima-machi Yaemizo, Yaemizo, Saga 8490932, Japan
[4] Kyushu Univ, Fac Informat Sci & Elect Engn, 744 Motooka,Nishi ku, Fukuoka 8190395, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SL期
关键词：
surface passivation; a-Si; H; PECVD; silicon heterojunction (SHJ); solar cells; HYDROGENATED AMORPHOUS-SILICON; SOLAR-CELL; SI/SIO2; INTERFACE; CARRIER LIFETIMES; PLASMA DEPOSITION; DANGLING BONDS; HETEROJUNCTION; EFFICIENCY; MECHANISM; NITRIDE;
D O I：
10.35848/1347-4065/ace118
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface passivation of crystalline silicon (c-Si) is studied during growth of hydrogenated amorphous silicon (a-Si:H) by means of plasma-enhanced CVD. The surface passivation is characterized by an in situ method of the photocurrent measurement of c-Si during the growth of an a-Si:H passivation layer at various growth temperatures. The passivation is also characterized by an ex situ method of the carrier lifetime measurement performed at RT in air. According to both the in situ and ex situ characterization results, the surface passivation is optimized around a growth temperate of 200 & DEG;C, where the defect reduction and the band offset formation at the a-Si:H/c-Si interface play important roles.
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页数：6
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