Synergistic Passivation and Down-Conversion by Imidazole-Modified Graphene Quantum Dots for High Performance and UV-Resistant Perovskite Solar Cells

被引:19
|
作者
Cai, Qianqian [1 ]
Sheng, Wangping [1 ]
Yang, Jia [1 ]
Zhong, Yang [1 ]
Xiao, Shuqin [1 ]
He, Jiacheng [1 ]
Tan, Licheng [1 ,2 ]
Chen, Yiwang [1 ,2 ,3 ,4 ]
机构
[1] Nanchang Univ, Inst Polymers & Energy Chem IPEC, Coll Chem & Chem Engn, Jiangxi Prov Key Lab New Energy Chem, 999 Xuefu Ave, Nanchang 330031, Peoples R China
[2] Peking Univ, Yangtze Delta Inst Optoelect, 60 Chongzhou Ave, Nantong 226010, Peoples R China
[3] Jiangxi Normal Univ, Natl Engn Res Ctr Carbohydrate Synth, Key Lab Fluorine & Silicon Energy Mat & Chem, Minist Educ, 99 Ziyang Ave, Nanchang 330022, Peoples R China
[4] Gannan Normal Univ, Coll Chem & Chem Engn, Ganzhou 341000, Peoples R China
基金
中国国家自然科学基金;
关键词
down-conversion; graphene quantum dots; interface passivation; perovskite solar cells; UV stability; EFFICIENCY ENHANCEMENT; SNO2;
D O I
10.1002/adfm.202304503
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic-inorganic hybrid perovskite solar cells (PVSCs) have achieved stunning progress during the past decade, which has inspired great potential for future commercialization. However, tin dioxide (SnO2) as a commonly used electron transport layer with varied defects and energy level mismatch with perovskite contributes to the energy loss and limitation of charge extraction. Herein, imidazole-modified graphene quantum dots (IGQDs) are introduced as the interlayer, which plays a significant role in three aspects: 1) dually passivating the defects of SnO2 and buried interface of perovskite by first-principles calculations; 2) accelerating the carrier extraction and transfer owing to ideal band alignment; and 3) improving light utilization through down-conversion proved by light intensity measurement. Consequently, the devices based on IGQDs/SnO2 not only exhibit the champion power conversion efficiency (PCE) of 24.11%, but display a significantly enhanced ultraviolet (UV) stability retaining about 81% of their initial PCEs after continuous UV irradiation (365 nm, 20 mW cm(-2)) for 300 h. Moreover, the unencapsulated modified device remains 82% after storing for 1650 h in air (20-30 & DEG;C, RH 45-55%). This work furnishes a novel method for the combination of interfacial passivation and photon management, which holds out for the prospect of employment in other optoelectronic applications.
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页数:11
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