High-power EUV free-electron laser for future lithography

被引:17
作者
Nakamura, Norio [1 ]
Kato, Ryukou [1 ]
Sakai, Hiroshi [1 ]
Tsuchiya, Kimichika [1 ]
Tanimoto, Yasunori [1 ]
Honda, Yosuke [1 ]
Miyajima, Tsukasa [1 ]
Shimada, Miho [1 ]
Tanikawa, Takanori [1 ]
Tanaka, Olga A. [1 ]
Obina, Takashi [1 ]
Kawata, Hiroshi [1 ]
机构
[1] High Energy Accelerator Res Org KEK, Tsukuba, Ibaraki 3050801, Japan
关键词
EUV lithography; free-electron laser; energy-recovery linac; high-power light source; accelerator; future lithography; polarization control;
D O I
10.35848/1347-4065/acc18c
中图分类号
O59 [应用物理学];
学科分类号
摘要
The development of a high-power EUV light source is very important in EUV lithography to overcome the stochastic effects for higher throughput and higher numerical aperture (NA) in the future. We have designed and studied a high-power EUV free-electron laser (FEL) based on energy-recovery linac (ERL) for future lithography. We show that the EUV-FEL light source has many advantages, such as extremely high EUV power without tin debris, upgradability to a Beyond EUV (BEUV) FEL, polarization controllability for high-NA lithography, low electricity consumption, and low construction and running costs per scanner, as compared to the laser-produced plasma source used for the present EUV lithography exposure tool. Furthermore, the demonstration of proof of concept (PoC) of the EUV-FEL is in progress using the IR-FEL in the Compact ERL (cERL) at the High Energy Accelerator Research Organization. In this paper, we present the EUV-FEL light source for future lithography and progress in the PoC of the EUV-FEL.
引用
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页数:10
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