Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk process

被引：4

作者：

Sugitani, Shotaro ^{[1
]}

Nakajima, Ryuichi ^{[1
]}

Yoshida, Keita ^{[1
]}

Furuta, Jun ^{[1
]}

Kobayashi, Kazutoshi ^{[1
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Dept Elect, Kyoto, Japan

来源：

2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS | 2023年

关键词：

soft error; Single Event Upset (SEU); alpha particle; neutron; flip-flop;

D O I：

10.1109/IRPS48203.2023.10117957

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose two types of radiation-hard flip-flops named PLTGFF and FBTIFF with low ADP (area, delay and power) overheads by increasing critical charge (Q(crit)) at weak nodes. They have additional transistors and wires. PLTGFF has the area, delay, and power overheads by 5%, 4%, and 10%, respectively. FBTIFF has the area, delay, and power overheads by 42%, 10%, and 22%, respectively. They were fabricated in a 65 nm bulk process. alpha-particle irradiation tests revealed that alpha-SERs of PLTGFF and FBTIFF were suppressed by 45% and by 90% than that of STDFF. By spallation neutron irradiation tests, neutron-SERs of PLTGFF and FBTIFF were suppressed by 18% and by 35% than that of STDFF. In the terrestrial environment, the proposed FFs have better trade-offs between reliability and performance than these of multiplexed FFs with large overheads.

引用

页数：5

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