Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

被引：0

作者：

Spelta, Tarek ^{[1
]}

Martinez, Eugenie ^{[1
]}

Veillerot, Marc ^{[1
]}

Rocha, Pedro Fernandes Paes Pinto ^{[1
,2
]}

Vauche, Laura ^{[1
]}

Salem, Bassem ^{[2
]}

Hyot, Berangere ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

[2] Univ Grenoble Alpes, CNRS, CEA LETI Minatec, Grenoble INP,LTM, Grenoble, France

来源：

SURFACE AND INTERFACE ANALYSIS | 2024年 / 56卷 / 07期

关键词：

GaN; HAXPES; HEMT; oxidation; ToF-SIMS; SURFACE; XPS;

D O I：

10.1002/sia.7299

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)-based transistors using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and hard X-ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O-3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O-3/H2O-based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl- and F-) at this Al2O3/GaN interface.

引用

页码：399 / 407

页数：9

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