Nonlinear Absorption of Terahertz Radiation by Free Charge Carriers in Polar Semiconductors

被引：0
|
作者：
Malevich, V. L. [1 ,2 ]
机构：
[1] Natl Acad Sci Belarus, BI Stepanov Inst Phys, Minsk, BELARUS
[2] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2024年 / 91卷 / 01期
关键词：
terahertz electromagnetic radiation; semiconductor; nonlinear absorption; free charge carriers; polar optical phonons;
D O I：
10.1007/s10812-024-01684-1
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
An analytical formula is obtained for the absorption coefficient of intense terahertz radiation by free electrons in a semiconductor when the main mechanism of electron scattering is spontaneous emission of polar optical phonons. The absorption coefficient is shown to increase sharply when the average energy of electron oscillations in the terahertz field exceeds the optical phonon energy.
引用
收藏
页码：17 / 20
页数：4
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