Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach

被引:4
作者
Lee, Jihyung [1 ]
Kim, Byeongsu [1 ]
Kim, Changjo [2 ]
Lee, Min-Ho [1 ]
Kozakci, Irem [1 ]
Cho, Sungjun [1 ]
Kim, Beomil [3 ]
Lee, Sang Yeon [2 ]
Kim, Junho [1 ]
Oh, Jihun [3 ]
Lee, Jung-Yong [1 ]
机构
[1] Korea Adv Inst Sci & Technol KAIST, Sch Elect Engn EE, Daejeon 34141, South Korea
[2] Korea Adv Inst Sci & Technol KAIST, Informat & Elect Res Inst, Daejeon 34141, South Korea
[3] Korea Adv Inst Sci & Technol KAIST, Dept Mat Sci & Engn, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
interface engineering; ZnO; CQD interfaces; colloidal quantum dot; cinnamic acid ligand; efficientcharge extraction; CQD; organic hybrid solar cell; ELECTRON EXTRACTION; EFFICIENT; PERFORMANCE; ZNO; TRANSPORT; PHOTOCURRENT; STABILITY; OXYGEN; DOTS; PBSE;
D O I
10.1021/acsami.3c08419
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hybrid colloidal quantum dot (CQD)/organic architecturesare promisingcandidates for emerging optoelectronic devices having high performanceand inexpensive fabrication. For unlocking the potential of CQD/organichybrid devices, enhancing charge extraction properties at electrontransport layer (ETL)/CQD interfaces is crucial. Hence, we carefullyadjust the interface properties between the ETL and CQD layer by incorporatingan interfacial layer for the ETL (EIL) using several types of cinnamicacid ligands. The EIL having a cascading band offset (& UDelta;E (C)) between the ETL and CQD layer suppresses the potentialbarrier and the local charge accumulation at ETL/CQD interfaces, therebyreducing the bimolecular recombination. An optimal EIL effectivelyexpands the depletion region that facilitates charge extraction betweenthe ETL and CQD layer while preventing the formation of shallow traps.Representative devices with an EIL exhibit a maximum power conversionefficiency of 14.01% and retain over 80% of initial performances after300 h under continuous maximum power point operation.
引用
收藏
页码:39408 / 39416
页数:9
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