Optical Recrystallization of Nanocrystalline Silicon Ribbons

被引:1
作者
Serra, Filipe [1 ]
Costa, Ivo [1 ]
Silva, Jose A. [1 ]
Serra, Joao M. [1 ]
机构
[1] Univ Lisbon, Fac Ciencias, Inst Dom Luiz, P-1749016 Lisbon, Portugal
关键词
photovoltaic; silicon powder; silicon feedstock; metallurgy; silicon ribbons; chemical vapor deposition; zone-melting recrystallization; ZONE-MELTING RECRYSTALLIZATION; FILM SOLAR-CELLS; FOILS; WAFERS; SI;
D O I
10.3390/met13030452
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Silicon on Dust Substrate (SDS) is a gas-to-wafer process that produces multicrystalline silicon ribbons directly from gaseous feedstock (silane), avoiding the standard industry steps of polysilicon deposition, crystal growth, and wafering. The SDS technique consists of three main steps: (i) micrometric-sized silicon powder production by grinding silicon chunks; (ii) chemical vapor deposition (CVD) of silicon over this silicon powder substrate; and (iii) zone-melting recrystallization (ZMR) of the nanocrystalline pre-ribbon obtained in the CVD step. Several samples were produced by this technique. During CVD, mechanically self-sustained nanocrystalline pre-ribbons were grown over silicon powder substrates, with growth rates in the order of 50 mu m/min. The ZMR process performance is substantially impacted by the pre-ribbon physical characteristics. The best and largest recrystallizations were achieved on pre-ribbons grown over powder substrates with smaller particle sizes, which also have lower substrate powder incorporation ratios. Multicrystalline silicon ribbons with crystalline areas as large as 2 x 4 cm(2) were successfully produced. These areas have visible columnar crystal growth with crystal lengths up to 1 cm. The SDS ribbons' measured resistivity confirmed the high powder content of the resulting material. The ability to produce solar cells on SDS multicrystalline silicon ribbons was demonstrated.
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页数:11
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