Microstructure regulation and failure mechanism study of BaTiO3-based dielectrics for MLCC application

被引:25
作者
Gu, Yan [1 ]
Zhang, Faqiang [1 ]
Wu, Wanghua [1 ]
Liu, Zhifu [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
关键词
BaTiO3-based dielectrics; failure mechanism; microstructure regulation; oxygen vacancies; leakage current; CORE-SHELL STRUCTURE; ELECTRICAL-PROPERTIES; DEGRADATION; MG; RELIABILITY;
D O I
10.1142/S2010135X23500029
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Most widely used dielectrics for MLCC are based on BaTiO3 composition which inevitably shows performance degradation during the application due to the migration of oxygen vacancies (V-(sic)). Here, the BaTiO3, (Ba0.97Ca0.03)TiO3, Ba(Ti0.98Mg0.02)O-3, (Ba0.97Ca0.03)(Ti0.98Mg0.02)O-3, (Ba0.96Ca0.03Dy0.01)(Ti0.98Mg0.02)O-3 ceramics (denoted as BT, BCT, BTM, BCTM and BCDTM, respectively) were prepared by a solid-state reaction method. The core-shell structured grains (similar to 200 nm) featured with 10-20 nm wide shell were observed and contributed to the relatively flat dielectric constant-temperature spectra of BTM, BCTM and BCDTM ceramics. The TSDC study found that the single/mix doping of Ca2+, especially the Mg2+, Mg2+/Ca2+ and Mg2+/Ca2+/Dy3+ could limit the emergence of V-(sic) during the sintering and suppress its long-range migration under the electric-field. Because of this, the highly accelerated lifetimes of the ceramics were increased and the value of BCDTM is 377 times higher than that of BT ceramics. The p-n junction model was built to explain the correlation mechanism between the long-range migration of VO and the significantly increased leakage current of BT-based dielectrics in the late stage of HALT.
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页数:8
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