Computational Investigation Of Zn-based Single Buffer Layers Toward Cd-free High-efficiency CIGS Thin Film Solar Cells

被引：14

作者：

Moon, Mahabub Alam ^{[1
]}

Biplab, Sayed Rezwanul Islam ^{[1
]}

Ali, Hasan ^{[1
]}

Rahman, Ferdous ^{[1
]}

Rana, Sohel ^{[1
]}

Kuddus, Abdul ^{[2
,3
]}

机构：

[1] Begum Rokeya Univ, Dept Elect & Elect Engn, Rangpur 5400, Bangladesh

[2] Saitama Univ, Grad Sch Sci & Engn, Saitama 3388570, Japan

[3] Ritsumeikan Univ, Ritsumeikan Global Innovat Res Org R GIRO, Shiga 5258577, Japan

来源：

JOURNAL OF APPLIED SCIENCE AND ENGINEERING | 2023年 / 26卷 / 12期

关键词：

Zn-based buffer; BaSi; 2; BSF; CIGS; SCAPS-1D; Thin film solar cell; NUMERICAL-SIMULATION; OPTIMIZATION; PERFORMANCE; DEPOSITION; CU(IN;

D O I：

10.6180/jase.202312_26(12).0012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The photovoltaic performance of copper indium gallium diselenide (CIGS)-based solar cells with Cd-free single buffer layers and a barium disulfide (BaSi2) back-surface field (BSF) has been studied through a numerical approach using a one-dimensional solar cell capacitance simulator (SCAPS-1D). The efficacy of the buffer layer of cadmium sulfide (CdS) via FTO/CdS/CIGS/BaSi2/Mo heterostructure has been studied first and thereafter toxic CdS is replaced by various non-toxic buffers; zinc selenide (ZnSe), indium-doped zinc sulfide (ZnS:In), and indium sulfide (In2S3). Comprehensive research has been performed on the effects of buffer layer thickness, gallium (Ga) concentration in CIGS absorber, BaSi2 BSF doping density, various back contact metals, and cell operating temperature. The highest power conversion efficiency (PCE) of the CIGS-based solar cell with the CdS buffer layer is 26.24 percent, while solar cells with Zn-based buffers made of ZnS:In or ZnSe show improved PCE of 17.68 percent and 17.56 percent, respectively. This study demonstrates the enormous potential of Zn-based ZnS:In and ZnSe buffers for the experimental fabrication of high-efficiency thin-film solar cells with the following structure: FTO/buffer/CIGS/BaSi2/Mo.

引用

页码：1799 / 1808

页数：10

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