Effect of Parasitic Leakage Currents Associated with the Regrown Aperture of AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

被引：0

作者：

Pouladi, Sara ^{[1
]}

Ryou, Jae Hyun ^{[1
,2
]}

机构：

[1] Univ Houston, Dept Mech Engn, Texas Ctr Superconduct UH, Adv Mfg Inst, Houston, TX 77204 USA

[2] Univ Houston, Dept Elect & Comp Engn, Mat Sci & Engn Program, Houston, TX USA

来源：

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年

关键词：

CAVET; regrown GaN; aperture; leakage path; and parasitic leakage current; GAN;

D O I：

10.1109/JCS57290.2023.10102954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a numerical simulation on the effect of leakage paths in the regrown GaN layer in the aperture and above the current blocking layer (CBL) of current aperture vertical electron transistor (CAVET) devices. Here, a 2D TCAD modeling is employed to simulate a CAVET device structure considering two main origins of parasitic leakage current from CBL/regrown-GaN interface and gate/regrown-GaN bulk and their degree of detrimental effect on the characteristics of AlGaN/GaN CAVETs.

引用

页数：3

共 50 条

[21] The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors
Lin, D. F.
Wang, X. L.
Xiao, H. L.
Wang, C. M.
Jiang, L. J.
Feng, C.
Chen, H.
Hou, Q. F.
Deng, Q. W.
Bi, Y.
Kang, H.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 55 (03):
[22] Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
Rumyantsev, SL
Pala, N
Shur, MS
Gaska, R
Levinshtein, ME
Khan, MA
Simin, G
Hu, X
Yang, J
JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6726 - 6730
[23] Surface control process of AlGaN for suppression of gate leakage currents in AlGaN/GaN heterostructure field effect transistors
Hashizume, T
Kotani, J
Basile, A
Kaneko, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7): : L111 - L113
[24] Ultralow-Leakage AlGaN/GaN High Electron Mobility Transistors on Si With Non-Alloyed Regrown Ohmic Contacts
Song, Bo
Zhu, Mingda
Hu, Zongyang
Qi, Meng
Nomoto, Kazuki
Yan, Xiaodong
Cao, Yu
Jena, Debdeep
Xing, Huili Grace
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (01) : 16 - 19
[25] Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
Miller, EJ
Dang, XZ
Yu, ET
JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 5951 - 5958
[26] Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
Sasangka, W. A.
Gao, Y.
Gan, C. L.
Thompson, C. V.
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 393 - 396
[27] Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
Poblenz, C
Waltereit, P
Rajan, S
Heikman, S
Mishra, UK
Speck, JS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1145 - 1149
[28] Reduction of Gate Leakage Current on AlGaN/GaN High Electron Mobility Transistors by Electron-Beam Irradiation
Oh, S. K.
Song, C. G.
Jang, T.
Kim, Kwang-Choong
Jo, Y. J.
Kwak, J. S.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (03) : 1738 - 1740
[29] Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors
Fan, ZF
Mohammad, SN
Aktas, O
Botchkarev, AE
Salvador, A
Morkoc, H
APPLIED PHYSICS LETTERS, 1996, 69 (09) : 1229 - 1231
[30] InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs)
Shalini Lal
Eric Snow
Jing Lu
Brian Swenson
Stacia Keller
Steven P. Denbaars
Umesh K. Mishra
Journal of Electronic Materials, 2012, 41 : 857 - 864

← 1 2 3 4 5 →