Effect of Parasitic Leakage Currents Associated with the Regrown Aperture of AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

We present a numerical simulation on the effect of leakage paths in the regrown GaN layer in the aperture and above the current blocking layer (CBL) of current aperture vertical electron transistor (CAVET) devices. Here, a 2D TCAD modeling is employed to simulate a CAVET device structure considering two main origins of parasitic leakage current from CBL/regrown-GaN interface and gate/regrown-GaN bulk and their degree of detrimental effect on the characteristics of AlGaN/GaN CAVETs.