Magnetoelectric (ME) composites, which are magnetostrictive-piezoelectric composites, have garnered attention for use in various application fields owing to their large ME coupling compared with single-phase multiferroic materials. The maximum ME coupling is observed when an increased DC magnetic bias field is applied, which results in large devices with degraded sensitivity due to electromagnetic noise. To address this problem, a strong self-biased ME composite that generates the maximum ME response in a zero-bias field was proposed in this study. Highly self-biased ME composites were prepared by combining soft magnetic Ni and highly permeable Metglas magnetostrictive layers with a Pb(Mg1/3Nb2/3)O3-PbZrTiO3 piezoelectric single-crystal laminate structure and inducing a magnetization gradient. The maximum ME voltage value without a DC bias field was evaluated to be 4.2 V/cm center dot Oe for an MMNPNMM (M: Metglas foil, N: nickel, P: PMN-PZT) structure, which is 625 % higher than that of conventional ME composites. Therefore, the relatively bulky means of the DC-bias application on ME materials could be eliminated, resulting in a simple ME device with a small volume using the magnetization gradient concept.(c) 2023 Published by Elsevier B.V.
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Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Immanuel Kant Balt Fed Univ, REC SMBA, Kaliningrad 236041, RussiaLomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Makarova, Liudmila A.
Alekhina, Iuliia A.
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Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Immanuel Kant Balt Fed Univ, REC SMBA, Kaliningrad 236041, RussiaLomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Alekhina, Iuliia A.
Khairullin, Marat F.
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Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, RussiaLomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Khairullin, Marat F.
Makarin, Rodion A.
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Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, RussiaLomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Makarin, Rodion A.
Perov, Nikolai S.
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Lomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
Immanuel Kant Balt Fed Univ, REC SMBA, Kaliningrad 236041, RussiaLomonosov Moscow State Univ, Fac Phys, Moscow 119991, Russia
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
Tsang, C. H.
Chau, K. H.
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
Chau, K. H.
Wong, C. K.
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
Wong, C. K.
Wong, Y. W.
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China
Wong, Y. W.
Shin, F. G.
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机构:Hong Kong Polytech Univ, Dept Appl Phys, Mat Res Ctr, Hong Kong, Hong Kong, Peoples R China