One-Dimensional Sulfur Nanowires: A Potential n-Type Material of Channel Used in Sub-5-nm Transistors

Materials with low dimensionalities have been presented as new choices of field-effect transistors (FETs), whose channel materials are based on silicon to elimi-nate the restriction related to scaling. An approach called ab initio quantum transport is employed to simulate a gate-all-around (GAA) sulfur nanowire (NW) FETs. The GAA sulfur FETs having a gate length (L-g, where L-g taking 5, 3, and 1 nm) and a suitable underlap (UL) could gratify the current of ON-state (I-ON), power dissipation (PDP), and delay period (t) concerning the needs of 2028 to achieve higher performance (HP) and a lower dissipation (LP) request of International Technology Roadmap for Semiconductors (ITRS) in 2013. Therefore, the GAA sulfur FETs can be a latent choice for scaling Moore's law downward to 1 nm.