Magnetization Reversal of Magnetic Tunnel Junctions by Low-Current Pulses

被引：0
作者：
Pashen'kin, Igor Yu. [1 ]
Gusev, Nikita S. [2 ]
Tatarskiy, Dmitry A. [2 ]
Sapozhnikov, Maksim V. [2 ]
机构：
[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevsky State Univ, RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 04期
基金：
俄罗斯科学基金会;
关键词：
Magnetic tunneling; Magnetization; Frequency modulation; Magnetic hysteresis; Junctions; Resistance; Perpendicular magnetic anisotropy; Magnetic tunnel junction (MTJ); magnetoelectric effects; spintronics; SPIN-TRANSFER-TORQUE; MAGNETORESISTANCE; MRAM;
D O I：
10.1109/TED.2024.3367318
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnetization curves of highly resistive CoFeB/MgO/CoFeB/IrMn magnetic tunnel junctions (MTJs) are studied in dependence of the electrical field in the barrier. It is shown that the magnetoresistive hysteresis curve of the free layer (FL) is shifted by 6 Oe with the increase of the applied voltage from 50 mV to 1 V. The 100-ns voltage pulse of 2 V changes the magnetization of the FL by 50%. At that the current density of the pulse is small enough as 10( 3 )A/cm (2 ). The most probable explanation of the observed effect is the dependence of the exchange interaction between the ferromagnetic (FM) layers in the MTJ on the electric field in the barrier, which reaches a value of 10 7 V/cm. The architecture of the MRAM cell operating on the observed effect is proposed.
引用
收藏
页码：2755 / 2759
页数：5
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