High-Speed SiGe BiCMOS Circuits for Optical Communication

被引:2
作者
Torfs, Guy [1 ]
Moeneclaey, Bart [1 ]
Lambrecht, Joris [1 ]
Bruynsteen, Cedric [1 ]
Declerq, Jakob [1 ]
Niu, Shengpu [1 ]
Singh, Nishant [1 ]
Verbeke, Marijn [1 ]
Yin, Xin [1 ]
Ossieur, Peter [1 ]
Bauwelinck, Johan [1 ]
机构
[1] Univ Ghent, Dept Informat Technol, IDLab, imec, Ghent, Belgium
来源
2023 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS | 2023年
基金
欧盟地平线“2020”;
关键词
optical transceivers; driver; equalizer; transimpedance amplifier; multiplexer;
D O I
10.1109/BCICTS54660.2023.10311016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an overview of SiGe BiCMOS circuits for next-generation optical communication links targeting 100 GBd PAM4 modulation per wavelength to support 4-lane 800Gb and 8-lane 1.6Tb Ethernet. Signal generation at these rates is challenging. For this, an analog multiplexer making use of return-to-zero (RZ) modulation is presented. The explicit RZ generation enables equalization of the interleaved signal. Higher equalization orders are obtained with a 120 GBd PAM4 4-to-1 multiplexer with a mixed-signal 7-tap feedforward equalizer. The equalizer consists of a combination of digital delay cells and analog delay cells enabling a compact and power efficient solution. Quad-channel modulator drivers and receivers finish the required highspeed circuits. Based on traveling-wave architectures high gain-bandwidth products are realized.
引用
收藏
页码:153 / 158
页数:6
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