Background: : Third-generation devices offer superior attributes, necessitating advanced packaging materials for harsh operating environments. Incorporating 3D porous architectures to increase the reaction area further enhances the reaction rate, making transient liquid phase bonding an ideal interconnection process. Methods: : Fabrication of monolithic porous Cu films using a bicontinuous microemulsion (BME) as a dynamic soft template is reported. The BME phase consists of interconnected three-dimensional networks of aqueous and oil phases, separated by surfactants and cosurfactants. This unique structure enables the selective electrodeposition of Cu exclusively within the aqueous region, preventing any unwanted reactions in the oil phase. Tunable porosity in the monolithic Cu film is achieved by adjusting the water to oil phase ratio in the BME. Significant findings: : The Sn-plated porous Cu films exhibit low-temperature reflow capability while still maintaining high service temperatures. The utilization of the BME soft template offers a promising approach for fabricating monolithic Cu films with tunable porosity, providing flexibility in controlling the compositions and performance of interconnections. The compatibility of the BME with existing wafer deposition techniques makes it a viable and scalable solution for mass production. The electrodeposition of monolithic Cu arrays on Cu pillars demonstrates its potential applicability in advanced packaging technologies.
机构:
Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Gloria, Danmar
Gooding, J. Justin
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Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Gooding, J. Justin
Moran, Grainne
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Univ New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Univ New S Wales, Analyt Ctr, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Moran, Grainne
Hibbert, D. Brynn
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Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Samsung Adv Inst Technol, Samsung Elect, Suwon 16678, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Taikyu
Choi, Cheol Hee
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Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Choi, Cheol Hee
Hur, Jae Seok
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Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Hur, Jae Seok
Ha, Daewon
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Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Ha, Daewon
Kuh, Bong Jin
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Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kuh, Bong Jin
Kim, Yongsung
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机构:Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Yongsung
Cho, Min Hee
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h-index: 0
机构:
Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Cho, Min Hee
Kim, Sangwook
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h-index: 0
机构:
Samsung Adv Inst Technol, Samsung Elect, Suwon 16678, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Sangwook
Jeong, Jae Kyeong
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h-index: 0
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Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
机构:
Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Gloria, Danmar
Gooding, J. Justin
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h-index: 0
机构:
Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Gooding, J. Justin
Moran, Grainne
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h-index: 0
机构:
Univ New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Univ New S Wales, Analyt Ctr, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
Moran, Grainne
Hibbert, D. Brynn
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h-index: 0
机构:
Univ New S Wales, Sch Chem, Sydney, NSW 2052, AustraliaUniv New S Wales, Sch Chem, Sydney, NSW 2052, Australia
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Samsung Adv Inst Technol, Samsung Elect, Suwon 16678, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Taikyu
Choi, Cheol Hee
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Choi, Cheol Hee
Hur, Jae Seok
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h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Hur, Jae Seok
Ha, Daewon
论文数: 0引用数: 0
h-index: 0
机构:
Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Ha, Daewon
Kuh, Bong Jin
论文数: 0引用数: 0
h-index: 0
机构:
Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kuh, Bong Jin
Kim, Yongsung
论文数: 0引用数: 0
h-index: 0
机构:Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Yongsung
Cho, Min Hee
论文数: 0引用数: 0
h-index: 0
机构:
Semicond R&D Ctr, Samsung Elect, Hwaseong 18848, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Cho, Min Hee
Kim, Sangwook
论文数: 0引用数: 0
h-index: 0
机构:
Samsung Adv Inst Technol, Samsung Elect, Suwon 16678, Gyeonggi Do, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
Kim, Sangwook
Jeong, Jae Kyeong
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Dept Elect Engn, Seoul 04763, South KoreaHanyang Univ, Dept Elect Engn, Seoul 04763, South Korea