Dihydroindenofluorenes as building units in organic semiconductors for organic electronics

被引：8

作者：

Poriel, Cyril ^{[1
]}

Rault-Berthelot, Joelle ^{[1
]}

机构：

[1] Univ Rennes 1, UMR CNRS 6226, ISCR, Campus Beaulieu, F-35042 Rennes, France

来源：

CHEMICAL SOCIETY REVIEWS | 2023年 / 52卷 / 19期

关键词：

EXTERNAL QUANTUM EFFICIENCY; ACTIVATED DELAYED FLUORESCENCE; LIGHT-EMITTING-DIODES; DES INDENO-FLUORENES; FIELD-EFFECT TRANSISTORS; BIPOLAR HOST MATERIALS; THIN-FILM TRANSISTORS; D-PI-D; N-TYPE; ANODIC-OXIDATION;

D O I：

10.1039/d1cs00993a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This review aims to discuss organic semiconductors constructed on dihydroindenofluorene positional isomers, which are key molecular scaffolds in organic electronics. Bridged oligophenylenes are key organic semiconductors that have allowed the development of organic electronic technologies. Dihydroindenofluorenes (DHIFs) belong to the family of bridged oligophenylenes constructed on a terphenyl backbone. They have proven to be very promising building blocks for the construction of highly efficient organic semiconductors for all OE devices, namely organic light emitting diodes (OLEDs), phosphorescent OLEDs, organic field-effect transistors (OFETs), solar cells, etc. The five DHIF cores on which are constructed DHIF-based organic semiconductors used as active materials for organic electronics.

引用

页码：6754 / 6805

页数：52

共 229 条

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