Domain matching epitaxy of α-Ga2O3 thin film on sapphire by pulsed laser deposition

被引：1

作者：

Lee, Sang-A ^{[1
]}

Hwang, Jae-Yeol ^{[1
]}

机构：

[1] Pukyong Natl Univ, Dept Phys, Pusan 48513, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2023年 / 82卷 / 08期

关键词：

Ga2O3; Alpha phase; Domain matching epitaxy; Pulsed laser deposition; Thin film; GROWTH; BETA-GA2O3;

D O I：

10.1007/s40042-023-00766-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Metastable (00l)-oriented rhombohedral alpha-Ga2O3 thin films with phase purity were epitaxially grown on c-plane alpha-Al2O3 substrates using pulsed laser deposition. It was elucidated that domain matching epitaxy enables the epitaxial growth of alpha-Ga2O3 thin film on alpha-Al2O3 substrate by stabilizing structural instability through reducing misfit strain. In reciprocal space mapping analyses of alpha-Ga2O3 thin films with different thicknesses, no considerable differences in lattice parameters (a = 4.977 angstrom and c = 13.442 angstrom) and the degree of misfit strain were identified. The optical bandgap of alpha-Ga2O3 thin film was modulated with crystal quality from 4.75 to 5.3 eV in the thickness range from 4 to 49 nm, indicating the characteristics of alpha-phase. Our results provide a facile way to stabilize the metastable alpha-phase of Ga2O3 using the alpha-Ga2O3/alpha-Al2O3 heterostructures through domain matching epitaxy with comprehensive structural characteristics and a promising potential for bandgap tuning for power devices, sensors, and solar-blind deep-ultra-violet photodetectors.

引用

页码：781 / 785

页数：5

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